Hamamatsu Si APD

Hamamatsu Si APD

S2383

APD optimized for Infrared Low Bias Voltage type

Datasheet(142kB)

	Specifications

Package Metal Package Feature TO-18 Active Area dia.1 mm Spectral Response Range 400 to1000 nm Peak Wavelength 800 nm Photo Sensitivity at peak 0.5 A/W Breakdown Voltage 150 V Temperature Coefficient of VBR 0.65 V/deg. C Dark Current Max. 2 nA Cut-off Frequency 600 MHz Terminal Capacitance 6 pF Gain 100 Type Operating Temperature -20 to+85 deg. C Storage Temperature -55 to+125 deg. C Note Measurement Condition Typ. Ta=25 deg. C, unless otherwise noted

	Dimensional/Characteristic Chart

Spectral Response

Dimensional Outline (Unit: mm)

Si APD
S5139

Low bias operation, for 800 nm band, with mini-lens

Datasheet(142kB) Specifications Package Metal Package Feature TO-18 Active Area dia.0.5 mm Spectral Response Range 400 to1000 nm Peak Wavelength 800 nm Photo Sensitivity at peak 0.5 A/W Breakdown Voltage 150 V Temperature Coefficient of VBR 0.65 V/deg. C Dark Current Max. 1 nA Cut-off Frequency 900 MHz Terminal Capacitance 3 pF Gain 100 Type Operating Temperature -20 to+85 deg. C Storage Temperature -55 to+125 deg. C Note Measurement Condition Typ. Ta=25 deg. C, unless otherwise noted Dimensional/Characteristic Chart Spectral Response Dimensional Outline (Unit: mm) other link: http://www.pacific-sensor.com/pages/ap_all.html http://www.photonicsonline.com/Search.mvc?keyword=APD&searchType=0&x=10&y=11